Film growth precursors in a remote SiH[sub 4] plasma used for high-rate deposition of hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Film growth precursors in a remote SiH[sub 4] plasma used for high-rate deposition of hydrogenated amorphous silicon

Published:2000 Issue:5 Volume:18 Page:2153
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Kessels W. M. M.,van de Sanden M. C. M.,Schram D. C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of low-pressure DC Ar plasma torch with N2–SiH4–B2H6 gas mixture injection for Si–B–N thin film deposition;Vacuum;2024-07

2. Ion chemistry and ionic thin film deposition from HMDS‐photochemistry induced by VUV‐radiation from an atmospheric plasma;Plasma Processes and Polymers;2024-01-22

3. Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH4/H2 and SiH4/CH4/H2 Plasmas;The Journal of Physical Chemistry A;2020-06-01

4. Role of Electron–Ion Dissociative Recombination in $$\hbox {CH}_{4}$$ Microwave Plasma on Basis of Simulations and Measurements of Electron Energy;Plasma Chemistry and Plasma Processing;2019-06-24

5. Computational study on SiH4dissociation channels and H abstraction reactions;Japanese Journal of Applied Physics;2016-06-22

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