Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fluid–solid interaction finite element modeling of a kinetically driven growth instability in stressed solids;Archive of Applied Mechanics;2008-06-03
2. Thin film reaction of transition metals with germanium;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-05
3. Maskless lithography;Microelectronic Engineering;2005-03
4. Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects;Journal of Applied Physics;2004-11-15
5. Si/SiGe heterostructures: from material and physics to devices and circuits;Semiconductor Science and Technology;2004-09-15
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