Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths-Reference-Cited by-同舟云学术

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Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths

Published:2000 Issue:6 Volume:18 Page:3488
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lu Wu,Koester Steven J.,Wang Xie-Wen,Chu Jack O.,Ma Tso-Ping,Adesida Ilesanmi

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluid–solid interaction finite element modeling of a kinetically driven growth instability in stressed solids;Archive of Applied Mechanics;2008-06-03

2. Thin film reaction of transition metals with germanium;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-05

3. Maskless lithography;Microelectronic Engineering;2005-03

4. Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects;Journal of Applied Physics;2004-11-15

5. Si/SiGe heterostructures: from material and physics to devices and circuits;Semiconductor Science and Technology;2004-09-15

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