Investigation of the Au–Ge–Ni and Au–Ge–Pt system used for alloyed contacts to GaAs
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569392
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparative analysis of platinum diffusion parameters in GaAs and GaN semiconductors;Journal of Applied Physics;2007-07-15
2. Enhanced diffusion of germanium at the Au/Ge interface in the presence of water in a gold/germanium/nickel metal stack;Journal of Applied Physics;2004-04
3. Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems;Critical Reviews in Solid State and Materials Sciences;1996-01
4. Ohmic contacts ton‐GaAs with a Pt/Ge/Au contacting layer and a Ta‐Si‐N barrier: Electrical and metallurgical characteristics;Journal of Applied Physics;1994-06
5. Comparison of Au/Ni/Ge, Au/Pd/Ge, and Au/Pt/Ge Ohmic contacts ton‐type GaAs;Journal of Applied Physics;1990-01
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