Height control of InAs/GaAs quantum dots by combining layer-by-layer in situ etching and molecular beam epitaxy-Reference-Cited by-同舟云学术

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Height control of InAs/GaAs quantum dots by combining layer-by-layer in situ etching and molecular beam epitaxy

Published:2002 Issue:2 Volume:20 Page:668
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yang T.,Ishikawa T.,Kohmoto S.,Nakamura Y.,Nakamura H.,Asakawa K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3μm by metalorganic chemical vapor deposition;Physica E: Low-dimensional Systems and Nanostructures;2005-02

2. Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs∕GaAs by low-pressure metalorganic chemical vapor deposition;Applied Physics Letters;2004-10-04

3. Nanotechnologies of photonic crystals and quantum dots for ultrasmall and ultrafast all-optical switches;SPIE Proceedings;2004-03-25

4. Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching;Journal of Crystal Growth;2003-04

5. Effects of lateral quantum dot pitch on the formation of vertically aligned InAs site-controlled quantum dots;Journal of Applied Physics;2003-01-15

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