Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observation of the superconducting proximity effect in Nb/InAs andNbNx/InAsby Raman scattering;Physical Review B;2002-10-31
2. Profiling of electron accumulation layers in the near-surface region of InAs (110);Physical Review B;2001-08-07
3. Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching;Defect and Diffusion Forum;2000-08
4. Erratum: “Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering” [J. Vac. Sci. Technol. B 18, 144 (2000)];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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