Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes-Reference-Cited by-同舟云学术

Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes

Published:2021-07 Issue:4 Volume:39 Page:040601
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Jadhav Aakash¹,Lyle Luke A. M.²^ORCID,Xu Ziyi²,Das Kalyan K.³,Porter Lisa M.²^ORCID,Sarkar Biplab¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttarakhand 247667, India

2. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27676

Funder

Air Force Office of Scientific Research

Leibniz-Gemeinschaft

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/am-pdf/10.1116/6.0001059

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