Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers-Reference-Cited by-同舟云学术

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Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

Published:2009 Issue:3 Volume:27 Page:1655
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Rogers D. J.,Hosseini Teherani F.,Moudakir T.,Gautier S.,Jomard F.,Molinari M.,Troyon M.,McGrouther D.,Chapman J. N.,Razeghi M.,Ougazzaden A.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer;Journal of Physics D: Applied Physics;2016-07-15

2. Effect of ZnO buffer layer thickness on the epitaxial growth of GaN by reactive magnetron sputtering;Thin Solid Films;2013-10

3. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire;Journal of Crystal Growth;2013-05

4. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire;SPIE Proceedings;2012-02-09

5. Waveguiding-assisted random lasing in epitaxial ZnO thin film;Applied Physics Letters;2010-12-27

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