Etch‐stop characteristics of Sc2O3 and HfO2 films for multilayer dielectric grating applications-Reference-Cited by-同舟云学术

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Etch‐stop characteristics of Sc2O3 and HfO2 films for multilayer dielectric grating applications

Published:1996-09 Issue:5 Volume:14 Page:2973-2975
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Britten J. A.,Nguyen H. T.,Falabella S. F.,Shore B. W.,Perry M. D.,Raguin D. H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580256

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. Ion beam etching for multilayer dielectric pulse compressor gratings with top layers of HfO2;Acta Physica Sinica;2013

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