Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching-Reference-Cited by-同舟云学术

Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching

Published:2019-09 Issue:5 Volume:37 Page:051805
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Dallorto Stefano¹²³^ORCID,Lorenzon Monica¹,Szornel Julia¹,Schwartzberg Adam²,Goodyear Andy³,Cooke Mike³,Hofmann Martin²,Rangelow Ivo W.²^ORCID,Cabrini Stefano¹

Affiliation:

1. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720

2. Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, 98684 Ilmenau, Germany

3. Oxford Instruments Plasma Technology, North End, Yatton, Bristol BS49 4AP, United Kingdom

Funder

U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5120414

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