Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress-Reference-Cited by-同舟云学术

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Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

Published:2003 Issue:1 Volume:21 Page:198
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Doshi Sachin,Deenapanray Prakash N. K.,Tan H. H.,Jagadish C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures;Semiconductor Science and Technology;2016-07-21

2. Nanoscale doping of compound semiconductors by solid phase dopant diffusion;Applied Physics Letters;2016-03-21

3. Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers;Journal of Applied Physics;2012-12

4. Optical and physical properties of solgel-derived GeO_2:SiO_2 films in photonic applications;Applied Optics;2007-06-20

5. Quantum well intermixing enhancement using Ge-doped sol-gel derived SiO2 encapsulant layer in InGaAs∕InP laser structure;Applied Physics Letters;2005-02-21

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