Gallium growth and reconstruction on the Si(100) surface-Reference-Cited by-同舟云学术

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Gallium growth and reconstruction on the Si(100) surface

Published:1990-01 Issue:1 Volume:8 Page:245-248
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Baski A. A.,Nogami J.,Quate C. F.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577076

Cited by 92 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isolated and assembled silver aggregates on the Si(001) surface: the initial stage of film formation;Physical Chemistry Chemical Physics;2021

2. Anisotropic alloying: Formation of atomic scale trellis on the Si(100)-(2  ×  1) surface;Surface Science;2018-11

3. Analysis of the Sn chain length fluctuations on Si(100) 2×1 : An extraction of microscopic parameters;Physical Review B;2017-07-24

4. Scanning tunneling microscopy study on the oxidation and annealing of Ga/Si(111);Japanese Journal of Applied Physics;2017-03-27

5. Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100);Applied Surface Science;2015-10

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