The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction study-Reference-Cited by-同舟云学术

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The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction study

Published:1983 Issue:4 Volume:1 Page:888
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

de Jong T.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Substrate Cleaning on the Properties of GaAs Epilayers Grown on Si(100) Substrate by Molecular Beam Epitaxy;Journal of the Korean Vacuum Society;2010-09-30

2. Morphological and magnetic properties of Ge/MnxGe1−x/Ge(001)2×1 diluted magnetic semiconductor;Surface Science;2006-09

3. Molecular beam epitaxy growth of CdTe on Si(211);SPIE Proceedings;2005-01-10

4. Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy;Physical Review B;2003-03-31

5. Surface roughening by electron beam heating;Applied Physics Letters;1997-10-20

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