Influence of developer temperature and resist material on the structure quality in deep x-ray lithography-Reference-Cited by-同舟云学术

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Influence of developer temperature and resist material on the structure quality in deep x-ray lithography

Published:1998-11 Issue:6 Volume:16 Page:3547
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Pantenburg F. J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polymethyl Metacrylate with a Molecular Weight of 107 g/mol for X-ray Lithography;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-06

2. Polymethyl Methacrylate with a Molecular Weight of 10<sup>7</sup> g/mol for X-Ray Lithography;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2023-06-01

3. On the fabrication of thin-film artificial metal grid resonator antenna arrays using deep X-ray Lithography;Journal of Micromechanics and Microengineering;2020-01-20

4. Polymer-based X-ray masks patterned by direct laser writing;Review of Scientific Instruments;2018-11

5. Characterization of the surface contamination of deep X-ray lithography mirrors exposed to synchrotron radiation;Journal of Synchrotron Radiation;2018-04-24

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