Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching-Reference-Cited by-同舟云学术

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Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching

Published:2019-09 Issue:5 Volume:37 Page:051003
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Gasvoda Ryan J.¹^ORCID,Verstappen Yuri G. P.²,Wang Scott³,Hudson Eric A.³,Agarwal Sumit¹

Affiliation:

1. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, Colorado 80401

2. Applied Physics Department, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands

3. Lam Research Corporation, 4650 Cushing Parkway, Fremont, California 94538

Funder

Lam Research Corporation

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5110907

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving SiO2 to SiNx etch selectivity during atomic layer etching with multiple selective organic pre-functionalization steps;Journal of Vacuum Science & Technology A;2024-04-26

2. Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6);Journal of Vacuum Science & Technology A;2024-04-16

3. Clean SiO₂ atomic layer etching based on physisorption of high boiling point perfluorocarbon;Nanoscale;2024

4. Atomic Layer Etching of SiO₂ for Nanoscale Semiconductor Devices: A Review;Applied Science and Convergence Technology;2023-12-28

5. Purgeless atomic layer etching of SiO₂;Journal of Physics D: Applied Physics;2022-07-01

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