A new silicon phosphide, Si12P5: Formation conditions, structure, and properties-Reference-Cited by-同舟云学术

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A new silicon phosphide, Si12P5: Formation conditions, structure, and properties

Published:1997-03 Issue:2 Volume:15 Page:394-401
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Carlsson J. R. A.,Madsen L. D.,Johansson M. P.,Hultman L.,Li X.-H.,Hentzell H. T. G.,Wallenberg L. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580497

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Efficiency Spark Plasma Sintered Ge_0.3Si_0.7:P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping;Nanoscale and Microscale Thermophysical Engineering;2023-04-03

2. Thin Films of SiP Lamellar Alloys: A First Step toward 2D SiP;The Journal of Physical Chemistry C;2021-01-29

3. Synthesis and Applications of Colloidal Nanomaterials of Main Group- and Transition- Metal Phosphides;Handbook on Synthesis Strategies for Advanced Materials;2021

4. Enhanced Silicon Diphosphide-Carbon Composite Anode for Long-Cycle, High-Efficient Sodium Ion Batteries;ACS Applied Energy Materials;2019-02-28

5. First-principles study on the structural, elastic and electronic properties of the four Si3Sb4 compounds;Modern Physics Letters B;2019-02-20

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