Thin‐film deposition using low‐energy ion beams (4) Ion source modification-Reference-Cited by-同舟云学术

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Thin‐film deposition using low‐energy ion beams (4) Ion source modification

Published:1978-01 Issue:1 Volume:15 Page:118-119
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Amano J.,Lawson R. P. W.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.569418

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of substrate bias voltage on the purity of Cu films deposited by non-mass separated ion beam deposition;Thin Solid Films;2003-06

2. Preparation of high-purity Cu films by non-mass separated ion beam deposition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05

3. Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering‐type metal ion source;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-03

4. An r.f. ion beam source and direct ion beam deposition of large surface area thin Cu films on polycrystalline glass, Al2O3 and ZrO2 substrates;Surface and Coatings Technology;1993-01

5. Ion and plasma beam assisted thin film deposition;Thin Solid Films;1989-08

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