Metalorganic chemical vapor deposition of aluminum from trimethylamine alane using Cu and TiN nucleation activators-Reference-Cited by-同舟云学术

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Metalorganic chemical vapor deposition of aluminum from trimethylamine alane using Cu and TiN nucleation activators

Published:1991-01 Issue:1 Volume:9 Page:57-64
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Gross M. E.,Cheung K. P.,Fleming C. G.,Kovalchick J.,Heimbrook L. A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577130

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent;Chemistry of Materials;2018-03-12

2. Fourier transform infrared studies of the aluminum chemical vapor deposition using aluminum boro-hydride trimethylamine;Thin Solid Films;2010-02

3. Chemical Vapor Deposition of Metal-Containing Thin-Film Materials from Organometallic Compounds;Progress in Inorganic Chemistry;2007-03-09

4. (N,N -Dimethylethanamine)Trihydridoaluminum;Inorganic Syntheses;2007-01-05

5. Chemical vapor deposition of aluminum from methylpyrrolidine alane complex;Thin Solid Films;2006-07

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