Study of shallow silicon trench etch process using planar inductively coupled plasmas-Reference-Cited by-同舟云学术

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Study of shallow silicon trench etch process using planar inductively coupled plasmas

Published:1997-05 Issue:3 Volume:15 Page:573-578
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lee Ju-Hoon,Yeom Geun-Young,Lee Ju-Wook,Lee Jung-Yong

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580686

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching;Journal of Electronic Materials;2016-10-21

2. Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma;Japanese Journal of Applied Physics;2013-11-01

3. Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection;IEEE Journal of Selected Topics in Quantum Electronics;2011-07

4. Plasma parameters and active particles kinetics in HBr dc glow discharges;SPIE Proceedings;2009-10-23

5. Reduction of loading effects with the sufficient vertical profile for deep trench silicon etching by using decoupled plasma sources;Journal of Materials Processing Technology;2009-08

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