Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays-Reference-Cited by-同舟云学术

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Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays

Published:2018-09 Issue:5 Volume:36 Page:051805
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Breuer Janis¹,Bachmann Michael¹,Düsberg Felix¹,Pahlke Andreas¹,Edler Simon²,Langer Christoph³,Prommesberger Christian³,Ławrowski Robert³,Schreiner Rupert³,Serbun Pavel⁴,Lützenkirchen-Hecht Dirk⁴

Affiliation:

1. Ketek GmbH, 81737 Munich, Germany

2. Department of Physics, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85579 Neubiberg, Germany

3. Faculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Germany

4. School of Mathematics and Natural Sciences, University of Wuppertal, 42219 Wuppertal, Germany

Funder

German Federal Ministry of Economic Affairs & Energy

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5035189

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of the current saturation level of p-doped silicon field emitters;Journal of Vacuum Science & Technology B;2022-01

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