Affiliation:
1. FG Nanotechnologie, Institut für Mikro- und Nanelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, Germany
Abstract
In this paper, we introduce analog nonvolatile random access memory cells for neuromorphic computing. The analog memory cell [Formula: see text] channel is designed based on the simulation model including Fowler–Nordheim tunneling through a charge-trapping stack, trapping process, and transfer characteristics to describe a full write/read circle. 2D channel materials provide scaling to higher densities as well as preeminent modulation of the conductance by the accumulated space charge from the oxide trapping layer. In this paper, the main parameters affecting the distribution of memory states and their total number are considered. The dependence of memory state distribution on channel doping concentration and the number of layers is given. In addition, how the nonlinearity of memory state distribution can be overcome by variation of operating conditions and by applying pulse width modulation to the bottom gate voltage is also shown.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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