Etch characteristics of CeO2 thin films as a buffer layer for the application of ferroelectric random access memory-Reference-Cited by-同舟云学术

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Etch characteristics of CeO2 thin films as a buffer layer for the application of ferroelectric random access memory

Published:2001-07 Issue:4 Volume:19 Page:1068-1071
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Oh Chang-Seok,Kim Chang-Il,Kwon Kwang-Ho

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1376703

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric, magnetic and structural properties of Co doped CeO2 powders;Journal of Physics and Chemistry of Solids;2024-01

2. Spectroscopic ellipsometry study of Mn doped CeO2 thin films prepared by radio-frequency magnetron sputtering;Thin Solid Films;2022-10

3. Tuning of structural, optical, and impedance properties of CeO2 thin films by incorporation palladium ions;Journal of Materials Science: Materials in Electronics;2020-05-11

4. Physical properties of nanostructured CeO2 thin films grown by SILAR method;AIP Conference Proceedings;2018

5. Understanding the anomalous behavior of Vegard's law in Ce1−xMxO2 (M = Sn and Ti; 0 < x ≤ 0.5) solid solutions;Physical Chemistry Chemical Physics;2016

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