Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing;Journal of Nanomaterials;2019-12-03
2. Stress-and-Sense Investigation of Memory Effect in Si-NCs MIS Structures;physica status solidi (b);2018-03-07
3. Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers;Microelectronic Engineering;2017-06
4. Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications;Materials Science-Poland;2015-12-01
5. Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01
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