Effect of O2 gas partial pressure on mechanical properties of Al2O3 films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering-Reference-Cited by-同舟云学术

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Effect of O2 gas partial pressure on mechanical properties of Al2O3 films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering

Published:2012-09 Issue:5 Volume:30 Page:051511
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Fujiyama Hirokazu,Sumomogi Tsunetaka,Nakamura Masayoshi

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4746013

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative structural study of Al₂O₃–SiO₂ glasses and amorphous thin films;International Journal of Applied Glass Science;2024-04-17

2. Stable reactive deposition of amorphous Al 2 O 3 films with low residual stress and enhanced toughness using pulsed dc magnetron sputtering with very low duty cycle;Vacuum;2016-02

3. Investigations of AlGaN/GaN MOS-HEMT with Al2O3deposition by ultrasonic spray pyrolysis method;Semiconductor Science and Technology;2014-12-05

4. The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors;IEEE Transactions on Electron Devices;2014-06

5. Al2O3films grown by glow discharge plasma aluminising;Surface Engineering;2014-04-11

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