Process development of methane–hydrogen–argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Materials, Fabrication and Characterization Methods;Integrated Ring Resonators;2020
2. Inductively coupled CH 4 /H 2 plasma etching process for mesa delineation of InAs/GaSb type‐II superlattice pixels;Micro & Nano Letters;2019-06
3. Heterogeneous Silicon/III–V Semiconductor Optical Amplifiers;IEEE Journal of Selected Topics in Quantum Electronics;2016-11
4. Fabrication of low grass, smooth sidewall InGaAsP by methane–hydrogen inductively coupled plasma RIE through a metal lift-off mask patterned by e-beam lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
5. Fabrication challenges for indium phosphide microsystems;Journal of Micromechanics and Microengineering;2015-03-17
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