Low temperature material reaction at the Ti/Si(111) interface
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.573797
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1. Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer;Yugra State University Bulletin;2022-08-07
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3. Role of cerium dioxide in a tantalum diffusion barrier film for a Cu/Ta+CeO[sub 2]/Si structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
4. Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111);Applied Surface Science;1998-06
5. Tantalum-microcrystalline CeO2 diffusion barrier for copper metallization;Journal of Applied Physics;1998-02
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