Status of point defects in HgCdTe-Reference-Cited by-同舟云学术

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Status of point defects in HgCdTe

Published:1985-01 Issue:1 Volume:3 Page:131-137
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Jones C. E.,James K.,Merz J.,Braunstein R.,Burd M.,Eetemadi M.,Hutton S.,Drumheller J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573184

Cited by 82 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode;Sensors;2024-06-01

2. Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles;Journal of Applied Physics;2024-03-19

3. New insight into defect energy levels in HgCdTe;Infrared Physics & Technology;2024-03

4. 液相外延碲镉汞薄膜缺陷综述;Infrared and Laser Engineering;2023

5. Influence of composition of Hg1−x Cd x Te (x = 0.22–0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation;Materials Research Express;2019-04-17

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