Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals-Reference-Cited by-同舟云学术

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals

Published:2021-09 Issue:5 Volume:39 Page:052205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Gao Hantian¹^ORCID,Muralidharan Shreyas²,Karim Md Rezaul²^ORCID,Cao Lei R.³⁴^ORCID,Leedy Kevin D.⁵^ORCID,Zhao Hongping²⁶^ORCID,Rajan Siddharth¹⁶,Look David C.⁵⁷^ORCID,Brillson Leonard J.¹²^ORCID

Affiliation:

1. Department of Physics, The Ohio State University, Columbus, Ohio 43210

2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210

3. Nuclear Reactor Lab, The Ohio State University, Columbus, Ohio 43210

4. Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210

5. Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433

6. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210

7. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435

Funder

Air Force Office of Scientific Research

National Science Foundation

U.S. Department of Energy

Idaho Operations Office, U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001240

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1. Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography;Journal of Applied Physics;2023-10-18

2. Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al₂O₃/ β-Ga₂O₃ MOSCAPs;IEEE Transactions on Electron Devices;2023-07

3. Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer;Micro and Nanostructures;2023-04

4. Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in Pt/PtO/-Ga₂O₃ Vertical Schottky Barrier Diodes ;IEEE Transactions on Electron Devices;2022-11

5. Perspective on atomic scale investigation of point and extended defects in gallium oxide;Journal of Applied Physics;2022-05-21