Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma-Reference-Cited by-同舟云学术

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Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

Published:2006-07 Issue:4 Volume:24 Page:988-994
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Walkiewicz-Pietrzykowska Agnieszka,Espinós J. P.,González-Elipe Agustin R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2204927

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental validation of a building block of passive devices and stochastic analysis of PICs based on SiOC technology;Optics Express;2020-07-07

2. Silicon Oxycarbide Platform for Integrated Photonics;Journal of Lightwave Technology;2020-02-15

3. Pre-grafted Group on PE Surface by DBD Plasma and Its Influence on the Oxygen Permeation with Coated SiOx;Molecules;2019-02-21

4. Tailoring the wettability of glass using a double-dielectric barrier discharge reactor;Heliyon;2018-01

5. The influence of the Ar/O2ratio on the electron density and electron temperature in microwave discharges;Plasma Sources Science and Technology;2017-10-03

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