Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF[sub 2]
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Published:1998-01
Issue:1
Volume:16
Page:286
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Harrington William L.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
17 articles.
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