Author:
Lai Hsiang-Yueh,Chang-Liao Kuei-Shu,Wang Tien-Ko,Wang Ping-Kun,Cheng Chin-Lung
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by
8 articles.
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1. Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide Films;physica status solidi (a);2019-07-24
2. Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOzcharge trapping layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
3. Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01
4. Double gate dielectric stacks with Gd2O3 layer for application in NVSM devices;Microelectronic Engineering;2014-03
5. Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer;Acta Physica Sinica;2013