Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization-Reference-Cited by-同舟云学术

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Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization

Published:1999-07 Issue:4 Volume:17 Page:2389-2393
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Hu J. C.,Chang T. C.,Chen L. J.,Yang Y. L.,Chen S. Y.,Chang C. Y.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581777

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Glycine as an Efficient Corrosion Inhibitor for TiN Oxidation Environments;ECS Journal of Solid State Science and Technology;2023-02-01

2. Ultra-thin and high-aspect-ratio TiN nanosheets;Journal of Crystal Growth;2008-02

3. Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4and NH3by Introducing Ar Purge Time;Japanese Journal of Applied Physics;2004-04-09

4. Self-Organized Nanomolecular Films on Low-Dielectric Constant Porous Methyl Silsesquioxane at Room Temperature;Journal of The Electrochemical Society;2003

5. PECVD-Ti/TiN[sub x] Barrier with Multilayered Amorphous Structure and High Thermal Stability for Copper Metallization;Electrochemical and Solid-State Letters;2003

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