Kinetic ellipsometry study of the hydrogen plasma etching of hydrogenated amorphous silicon films-Reference-Cited by-同舟云学术

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Kinetic ellipsometry study of the hydrogen plasma etching of hydrogenated amorphous silicon films

Published:1988-07 Issue:4 Volume:6 Page:2482-2489
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Godet C.,Drevillon B.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575576

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry;The Journal of Chemical Physics;2014-08-28

2. Recombination and resistive losses at ZnO∕a‐Si:H∕c‐Si interfaces in heterojunction back contacts for Si solar cells;Journal of Applied Physics;2007-11

3. Optical evidence of amorphous-network change in the initial-growth stage a-Si:H;Journal of Non-Crystalline Solids;2000-09

4. Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution;Journal of Non-Crystalline Solids;1998-05

5. Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment;Physical Review B;1995-08-15

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