Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching-Reference-Cited by-同舟云学术

Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

Published:2013-01 Issue:1 Volume:31 Page:010604
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Cybart Shane A.,Roediger Peter,Ulin-Avila Erick,Wu Stephen M.,Wong Travis J.,Dynes Robert C.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4773919

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