Mechanisms for plasma etching of HfO2 gate stacks with Si selectivity and photoresist trimming-Reference-Cited by-同舟云学术

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Mechanisms for plasma etching of HfO2 gate stacks with Si selectivity and photoresist trimming

Published:2009-11 Issue:6 Volume:27 Page:1289-1302
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Shoeb Juline,Kushner Mark J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3231480

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

2. Review and future perspective of feature scale profile modeling for high-performance semiconductor devices;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-11-22

3. Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching;Japanese Journal of Applied Physics;2018-04-11

4. Boron Trichloride Dry Etching;Encyclopedia of Plasma Technology;2016-12-12

5. Advanced simulation technology for etching process design for CMOS device applications;Japanese Journal of Applied Physics;2016-06-28

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