Particulate contamination in silicon grown by molecular-beam epitaxy
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Controlling Contamination in Vacuum Systems;A Users Guide to Vacuum Technology;2023-11-20
2. The effect of in situ boron doping on the strain relaxation of Si0.8Ge0.2 : B/Si heterostructure grown by molecular beam epitaxy;Journal of Crystal Growth;1995-05
3. Techniques for the Growth of Crystalline Films by Molecular Beam Deposition;Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices;1993
4. A new electron beam evaporation source for Si molecular beam epitaxy controlled by a quadrupole mass spectrometer;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-11
5. Dislocations in strained-layer epitaxy: theory, experiment, and applications;Materials Science Reports;1991-11
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