Visible/infrared refractive index and phonon properties of GaN films grown on sapphire by hollow-cathode plasma-assisted atomic layer deposition
Author:
Affiliation:
1. Department of Physics, Faculty of Arts and Sciences, Marmara University, Goztepe, 34722 Istanbul, Turkey
Funder
The Scientific and technological council of Turkey
Marmara Üniversitesi
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5097467
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024
2. Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment;Surface and Coatings Technology;2022-03
3. Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes;Coatings;2021-12-07
4. Effect of N2/H2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A;2020-12
5. Gallium nitride thin films by microwave plasma-assisted ALD;Optical Materials Express;2019-10-02
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