In situ chemical etching of GaAs(001) and InP(001) substrates by gaseous HCl prior to molecular-beam epitaxy growth
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Published:1987-05
Issue:3
Volume:5
Page:730
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
26 articles.
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