Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.3319357
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Preferential zinc sputtering during the growth of aluminum doped zinc oxide thin films by radio frequency magnetron sputtering;Journal of Materials Chemistry C;2022
2. Variation in electrical and structural properties of Ga-doped ZnO films caused by oxygen out-diffusion;Transactions of the Materials Research Society of Japan;2021-03-01
3. Electrical resistivity reduction and spatial homogenization of Ga-doped ZnO film by Zn layer insertion;Thin Solid Films;2020-08
4. Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating;Nanomaterials;2019-12-19
5. Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers;ACS Omega;2019-08-27
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