Modulating photoelectric performance of graphene/gallium arsenide nanowire photodetectors by applying gate voltage-Reference-Cited by-同舟云学术

Modulating photoelectric performance of graphene/gallium arsenide nanowire photodetectors by applying gate voltage

Published:2018-09 Issue:5 Volume:36 Page:051205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Luo Yanbin¹,Yan Xin¹,Wei Wei²,Zhang Mingqian³,Zhang Jinnan¹,Li Bang¹,Zheng Jiahui¹,Lu Qichao¹,Lin Qimin¹,Liu Wen⁴,Zhang Xia¹,Ren Xiaomin¹

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou 510006, China

3. Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, China

4. Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

Funder

Fund of State Key Laboratory of Information Photonics and Optical Communications

National Natural Science Foundation of China

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5050319

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