Plasma nitridation of thin Si layers for GaAs dielectrics
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3 -plasma surface pretreatment;Chinese Physics B;2015-12
2. Bulk synthesis of a-SixNyH and a-SixOy straight and coiled nanowiresElectronic supplementary information (ESI) available: Movies taken using a microscope. File RI19, shows a white fringe (Becke Line), which surrounds the particle, shift into the particle when the lens is moved farther away from focus. This indicates that the RI of the particle is greater than the surrounding calibration solution (RI = 1.9). Files RI21 and RI23 show the Becke line moving from the particle into the surrounding indicating that the RI of the particle is lower than its surrounding RI of 2.1 and 2.3 respectively. See http://www.rsc.org/suppdata/jm/b3/b311887h/;Journal of Materials Chemistry;2004
3. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP;Journal of Applied Physics;2003-08-15
4. Estimation of dissociation degree of N2 in an inductively coupled plasma by vacuum ultraviolet emission spectroscopy;Journal of Applied Physics;2002-09-15
5. Selective plasma nitridation and contrast reversed etching of silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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