Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories-Reference-Cited by-同舟云学术

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Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories

Published:2006 Issue:3 Volume:24 Page:1271
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Punchaipetch Prakaipetch,Ichikawa Kazunori,Uraoka Yukiharu,Fuyuki Takashi,Tomyo Atsushi,Takahashi Eiji,Hayashi Tsukasa

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Forming Fe nanocrystals by reduction of ferritin nanocores for metal nanocrystal memory;AIP Advances;2022-05-01

2. Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability;Advanced Materials;2019-07-16

3. Improving the performance of inverted organic solar cells by embedding silica‐coated silver nanoparticles deposited by electron‐beam evaporation;Polymer International;2019-03-12

4. Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures;SPIE Proceedings;2016-12-22

5. Crystallization of Ge in SiO2 matrix by femtosecond laser processing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01

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