Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection-Reference-Cited by-同舟云学术

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Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection

Published:1998-01 Issue:1 Volume:16 Page:1-5
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kiyota Yukihiro,Yano Fumiko,Suzuki Seiji,Inada Taroh

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580969

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility;Solid-State Electronics;2021-03

2. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-07

3. Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper;Applied Surface Science;2013-11

4. Temperature dependence of chemical-vapor deposition of pure boron layers from diborane;Applied Physics Letters;2012-09-10

5. High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations;IEEE Transactions on Electron Devices;2010-06

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