Unified Analytical Model for Charge Density and Plasmonic Waves in the Quaternary AlInGaN/AlN/GaN Heterostructures-Reference-Cited by-同舟云学术

Unified Analytical Model for Charge Density and Plasmonic Waves in the Quaternary AlInGaN/AlN/GaN Heterostructures

Published:2021 Issue: Volume: Page:167-177
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
language:
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Author:

Chattopadhyay Manju K.,Upadhyay Kavita Thorat

Publisher

Springer Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-16-1570-2_16

Reference17 articles.

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4. Božanić, M., Sinha, S.: Emerging transistor technologies capable of terahertz amplification: a way to re-engineer terahertz radar sensors. Sensors 19(11), 2454 (2019)

5. Knap, W., Dyakonov, M., Coquillat, D., Teppe, F., Dyakonova, N., Łusakowski, J., Karpierz, K., Sakowicz, M., Valusis, G., Seliuta, D., Kasalynas, I.: Field effect transistors for terahertz detection: physics and first imaging applications. J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009)

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