Analysis of Short Channel Effects in Symmetric Junction-Less Double-Gate Doped MOSFET Using Atlas 2-D Simulator
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-4175-9_50
Reference25 articles.
1. Jiang C, Liang R, Wang J, Xu J (2015) A two-dimensional analytical model for short channel junctionless double-gate MOSFETs. AIP Adv 5(5):057122
2. Jazaeri F, Sallese JM (2015) Carrier mobility extraction methodology in junctionless and inversion-mode FETs. IEEE Trans Electron Devices 62(10):3373–3378
3. Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Colinge JP (2009) Junctionless multigate field-effect transistor. Appl Phys Lett 94(5):053511
4. Meile W, Xiaoshi J, Rongyan C, Xi L, Lee JH (2013) Simulation study on short channel double-gate junctionless field-effect transistors. J Semicond 34(3):034004
5. Ali N, Dheer D, Paliwal S, Periasamy C (2015) TCAD analysis of variation in channel doping concentration on 45 nm Double-Gate MOSFET parameters. In: 2015 annual IEEE India conference (INDICON). IEEE, pp 1–6
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