Sn Doped GexSi1 − xOy Films for Uncooled Infrared Detections
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-7528-8_43
Reference10 articles.
1. Rana MM, Butler DP (2006) Radio frequency sputtered Si1-xGex and Si1-xGexOy thin films for uncooled infrared detectors. Thin Solid Films 514:355–360
2. Cheng Q, Almasri M (2009) Silicon germanium oxide (SixGe1-xOy) infrared material for uncooled infrared detection. Proc SPIE 7298:72980K
3. Iborra E, Clement M, Herrero LV, Sangrador J (2002) IR uncooled bolometers based on amorphous GexSi1-xOy on silicon micromachined structures. IEEE/JMEMS 11:322–329
4. Rajendra Kumar RT et al (2003) Room temperature deposited vanadium oxide thin films for uncooled infrared detectors. Mat Res Bull 38:1235–1240
5. Yon JJ et al (2010) Low resistance a-SiGe-based microbolmeter pixel for future smart IR FPA. In: Proceedings SPIE, infrared technology and applications XXXVI, vol 7660, p 76600U. https://doi.org/10.1117/12.850862
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