Author:
Amiri Iraj Sadegh,Ghadiry Mahdiar
Reference8 articles.
1. W. Yang, X. Cheng, Y. Yu, Z. Song, D. Shen, A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs. Solid-State Electron. 49(1), 43–48 (2005)
2. K. Yeom, J. Hinckley, J. Singh, Calculation of electron and hole impact ionization coefficients in SiGe alloys. J. Appl. Phys. 80(12), 6773–6782 (1996)
3. M. Ghadiry, M. Nadi, M. Saiedmanesh, H. Abadi, An analytical approach to study breakdown mechanism in graphene nanoribbon field effect transistors. J. Comput. Theor. Nanosci. 11(2), 339–343 (2014)
4. M. Ghadiry, A.A. Manaf, M.T. Ahmadi, H. Sadeghi, M.N. Senejani, Design and analysis of a new carbon nanotube full adder cell. J. Nanomater. 2011, 36 (2011)
5. M. Frisch, G. Trucks, H.B. Schlegel, G. Scuseria, M. Robb, J. Cheeseman, G. Scalmani, V. Barone, B. Mennucci, G. Petersson, Gaussian 09, Revision A. 02. Gaussian, Inc., Wallingford, CT, 200 (2009)