Moore’s Law Based Scaling Challenges and Their Device Physics Based Reviews
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-6649-3_30
Reference13 articles.
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3. Shinada T, Hori M, Taira K, Endoh T, Ohdomari I. Recent advance in single-ion implantation method for single-dopant devices. Extended Abstract on 9th International Workshop on Junction Technology, 2009, pp. 96–99.
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5. Do S-W, Kong SH, Lee Y-H. Ultra-shallow junction formation using plasma doping and excimer laser annealing for nano-technology CMOS applications. J Korean Phys Soc. 2009;55(3):1065–9.
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