High Sensitivity and Dynamic-Range 25 GBaud Silicon Receiver
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-0881-9_9
Reference14 articles.
1. B. Analui, D. Guckenberger, D. Kucharski, A. Narasimha, A fully integrated 20-Gb/s optoelectronic transceiver implemented in a standard 0.13-um CMOS SOI technology. IEEE J. Solid-State Circuits 41(12), 2945–2955 (2006)
2. Y. Chen et al., 22.2 A 25Gb/s hybrid integrated silicon photonic transceiver in 28 nm CMOS and SOI, in 2015 IEEE International Solid-State Circuits Conference—(ISSCC) Digest of Technical Papers, San Francisco, CA, pp. 1–3 (2015)
3. J.F. Buckwalter, X. Zheng, G. Li, K. Raj, A.V. Krishnamoorthy, A monolithic 25-Gb/s transceiver with photonic ring modulators and ge detectors in a 130-nm CMOS SOI process. IEEE J. Solid-State Circuits 47(6), 1309–1322 (2012)
4. M. Rakowski et al., 22.5 A 4 × 20Gb/s WDM ring-based hybrid CMOS silicon photonics transceiver, in 2015 IEEE International Solid-State Circuits Conference—(ISSCC). Digest of Technical Papers, San Francisco, CA, pp. 1–3 (2015)
5. Y. Yang, Q. Fang, M. Yu, X. Tu, R. Junfeng Song, G. Lo, High-performance Si photonics interposer featuring RF travelling-wave electrode (TWE) via Cu-BEOL, in Optical Fiber Communication Conference (OFC), paper Tu2A.6, Los Angeles, California, USA, 22–26 Mar. 2015
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