Observation of Proposed Triple Barrier δ-Doped Resonant Tunneling Diode
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-8403-6_63
Reference15 articles.
1. A. Ramesh et al., Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition. IEEE Trans. Electron Devices 59(3), 602–609 (2012)
2. L.K.S. Herval et al., in Circular Polarization in n-Type Resonant Tunneling Diodes with Si Delta-Doping in the Quantum Well. 29th Symposium on Microelectronics Technology and Devices (SBMicro) (Vol. 29, 2014), pp. 1–5
3. S.Y. Park et al., Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by chemical vapor deposition. IEEE Electron. Device Lett. 30(11), 1173–1175 (2009)
4. A. Pfenning et al., Nano thermometer based on resonant tunneling diodes: from cryogenic to room temperatures. ACS Nano 9, 6272–6277 (2015)
5. W. Lu, C.M. Lieber, Nanoelectronics from the bottom up. Nat. Mater. 6, 841–850 (2007)
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