Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)-Reference-Cited by-同舟云学术

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Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)

Published:2018-11-20 Issue: Volume: Page:573-581
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
language:
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Author:

Vandana B.,Parashar Prashant,Patro B. S.,Pradhan K. P.,Mohapatra S. K.,Das J. K.

Publisher

Springer Singapore

Link

http://link.springer.com/content/pdf/10.1007/978-981-13-2553-3_56

Reference29 articles.

1. Roy, K., Mukhopadhyay, S., Mahmoodi-Meimand, H.: Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits. Proc. IEEE 91, 305–327 (2003)

2. The international technology roadmap for semiconductors (2015)

3. Balestra, F., Cristoloveanu, S., Benachir, M., Brini, J., Elewa, T.: Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance. IEEE Electron Device Lett. 8, 410–412 (1987)

4. Fashtami, T.N., Ziabari, S.A.S.: Performance investigation of gate-all-around nanowire FETs for logic applications. Indian J. Sci. Technol. 8, 231 (2015)

5. Seidel, R.V., Graham, A.P., Kretz, J., Rajasekharan, B., Duesberg, G.S., Liebau, M., Unger, E., Kreupl, F., Hoenlein, W.: Sub-20 nm short channel carbon nanotube transistors. Nano Lett. 5, 147–150 (2005)

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2. Strained Junctionless MOSFETs: A Brief Review;2022 International Conference on Fourth Industrial Revolution Based Technology and Practices (ICFIRTP);2022-11-23

3. Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source;Engineering Reports;2019-12-27

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